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Product Specifications
| Product Attribute | Attribute Value |
|---|---|
| Infineon | |
| Product Category: | MOSFET |
| RoHS: | Details |
| Si | |
| Through Hole | |
| TO-220-7 | |
| N-Channel | |
| 1 Channel | |
| 49 V | |
| 80 A | |
| 5.8 mOhms | |
| - 20 V, + 20 V | |
| 1.2 V | |
| 232 nC | |
| - 55 C | |
| + 150 C | |
| 300 W | |
| Enhancement | |
| AEC-Q101 | |
| Tube | |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 36 ns |
| Forward Transconductance - Min: | 30 S |
| Height: | 15.65 mm |
| Length: | 10 mm |
| Product Type: | MOSFET |
| Rise Time: | 37 ns |
| 500 | |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 70 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Width: | 4.4 mm |
| Part # Aliases: | BTS282Z E3230 SP000969786 |
| Unit Weight: | 0.068784 oz |
FAQ
Manager: Mio Zhang
TEL:0755-88377560
Email:sales1@iccpower.com
WhatsApp/ Phone number: +8613677477773
Adress:4C, Building F-2, Xiufeng Industrial, Gankeng Community, Jihua Street, Longgang District, Shenzhen city China