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Product Specifications
| Product Attribute | Attribute Value |
|---|---|
| Infineon | |
| Product Category: | MOSFET |
| RoHS: | Details |
| Si | |
| Through Hole | |
| TO-247-3 | |
| N-Channel | |
| 1 Channel | |
| 200 V | |
| 130 A | |
| 9.7 mOhms | |
| - 30 V, + 30 V | |
| 1.8 V | |
| 161 nC | |
| - 55 C | |
| + 175 C | |
| 520 W | |
| Enhancement | |
| Tube | |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 74 ns |
| Forward Transconductance - Min: | 150 S |
| Height: | 20.7 mm |
| Length: | 15.87 mm |
| Product Type: | MOSFET |
| Rise Time: | 105 ns |
| 400 | |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 64 ns |
| Typical Turn-On Delay Time: | 41 ns |
| Width: | 5.31 mm |
| Unit Weight: | 0.211644 oz |
FAQ
Manager: Mio Zhang
TEL:0755-88377560
Email:sales1@iccpower.com
WhatsApp/ Phone number: +8613677477773
Adress:4C, Building F-2, Xiufeng Industrial, Gankeng Community, Jihua Street, Longgang District, Shenzhen city China