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STGWA60H65DFB

Part number:

STGWA60H65DFB

Manufacturer::

STMicroelectronics

Factory Pack Quantity:

600

Package/Case:

TO-247-3

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWA60H65DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current:	80 A
Continuous Collector Current Ic Max:	80 A
Gate-Emitter Leakage Current:	250 nA
Height:	5.15 mm
Length:	20.15 mm
Operating Temperature Range:	- 55 C to + 175 C
Product Type:	IGBT Transistors
	600
Subcategory:	IGBTs
Width:	15.75 mm
Unit Weight:	1.340411 oz